APTGT300A60G Microsemi Power Products Group, APTGT300A60G Datasheet

no-image

APTGT300A60G

Manufacturer Part Number
APTGT300A60G
Description
IGBT MODULE TRENCH PHASE LEG SP6
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGT300A60G

Igbt Type
Trench and Field Stop
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 300A
Current - Collector (ic) (max)
430A
Current - Collector Cutoff (max)
350µA
Input Capacitance (cies) @ Vce
24nF @ 25V
Power - Max
1150W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
RBSOA
Symbol
V
V
I
P
I
CM
CES
C
GE
D
G1
E1
E2
G2
Trench + Field Stop IGBT
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
VBUS
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
G1
E1
G2
E2
Power Module
Phase leg
Parameter
0/VBUS
Q1
Q2
VBUS
0/VBUS
APT website – http://www.advancedpower.com
OUT
OUT
®
T
T
T
T
T
C
C
C
C
j
= 150°C
= 25°C
= 80°C
= 25°C
= 25°C
Application
Features
Benefits
600A @ 550V
Max ratings
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Trench + Field Stop IGBT
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
1150
600
430
300
500
±20
APTGT300A60G
V
I
-
-
-
-
-
-
-
-
-
-
C
CES
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
= 300A @ Tc = 80°C
Symmetrical design
M5 power connectors
= 600V
Unit
W
V
A
V
®
Technology
1 - 5

Related parts for APTGT300A60G

APTGT300A60G Summary of contents

Page 1

... 80°C 300 25°C 500 C ± 25°C 1150 150°C 600A @ 550V j APT website – http://www.advancedpower.com APTGT300A60G V = 600V CES I = 300A @ Tc = 80°C C ® Technology - Low voltage drop - Low tail current - Switching frequency kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current ...

Page 2

... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT300A60G = 25°C unless otherwise specified j Test Conditions 600V 25°C V =15V 300A T = 150°C C ...

Page 3

... Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGT300A60G IGBT Diode To heatsink M6 For terminals M5 APT website – http://www.advancedpower.com Min Typ Max Unit 0.13 ° ...

Page 4

... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.14 0.9 0.12 0.7 0.1 0.08 0.5 0.06 0.3 0.04 0.1 0.02 0.05 0 0.00001 0.0001 APTGT300A60G =15V) GE 600 T 500 400 T =150°C J 300 200 100 0 0 1.5 2 2.5 Energy losses vs Collector Current ...

Page 5

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT300A60G 600 V ...

Related keywords