APTGT750U60D4G Microsemi Power Products Group, APTGT750U60D4G Datasheet - Page 3

• Manufacturer Part Number: APTGT750U60D4G
• Description: IGBT 600V 1000A 2300W D4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT750U60D4G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 800A
• Current - Collector (ic) (max): 1000A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 49nF @ 25V
• Power - Max: 2300W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: D4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal and package characteristics
Symbol Characteristic
Torque
D4 Package outline
V
R
T
Wt
T
T
ISOL
STG
thJC
C
J
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
(dimensions in mm)
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APTGT750U60D4G
Diode
IGBT
M6
M4
2500
Min
-40
-40
-40
3
1
Typ
0.065
Max
0.11
175
125
125
350
5
2
°C/W
Unit
N.m
°C
V
g
3 - 5