APTGF250A60D3G Microsemi Power Products Group, APTGF250A60D3G Datasheet - Page 4
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APTGF250A60D3G
Manufacturer Part Number
APTGF250A60D3G
Description
IGBT MODULE NPT PHASE LEG D3
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF250A60D3G.pdf
(5 pages)
Specifications of APTGF250A60D3G
Igbt Type
NPT
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.45V @ 15V, 300A
Current - Collector (ic) (max)
400A
Current - Collector Cutoff (max)
500µA
Input Capacitance (cies) @ Vce
13nF @ 25V
Power - Max
1250W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
D3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APTGF250A60D3G
Manufacturer:
APT
Quantity:
1 000
Part Number:
APTGF250A60D3G
Quantity:
50
Typical Performance Curve
600
500
400
300
200
100
600
500
400
300
200
100
40
30
20
10
0.12
0.08
0.06
0.04
0.02
Switching Energy Losses vs Gate Resistance
0
0.1
0
0
0.00001
0
0
0
5
V
V
I
T
C
CE
GE
J
= 300A
= 125°C
Output Characteristics (V
= 300V
=15V
0.9
0.3
0.5
0.5
0.1
0.7
6
0.05
5
Transfert Characteristics
Gate Resistance (ohms)
1
7
10
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
T
J
0.0001
=125°C
1.5
V
8
V
CE
GE
15
T
(V)
J
(V)
=25°C
T
2
9
J
=25°C
20
2.5
10
GE
T
=15V)
J
=125°C
25
0.001
rectangular Pulse Duration (Seconds)
3
11
Err
Eoff
Eon
3.5
Single Pulse
30
12
www.microsemi.com
IGBT
0.01
700
600
500
400
300
200
100
30
25
20
15
10
600
500
400
300
200
100
5
0
0
0
APTGF250A60D3G
0
0
0
V
V
R
T
V
T
R
T
Energy losses vs Collector Current
CE
GE
J
G
GE
J
G
=125°C
J
= 125°C
=6 Ω
= 6 Ω
0.1
Reverse Safe Operating Area
= 125°C
= 300V
=15V
= 15V
100
150
1
Output Characteristics
V
GE
200
=20V
2
I
C
V
300
300
CE
(A)
V
CE
(V)
1
Eon
(V)
3
400
V
GE
450
=15V
V
Eoff
Err
V
GE
500
GE
4
=9V
=12V
600
10
600
5
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