APTGT225DA170G Microsemi Power Products Group, APTGT225DA170G Datasheet - Page 5

• Manufacturer Part Number: APTGT225DA170G
• Description: IGBT 1700V 340A 1250W SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT225DA170G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 225A
• Current - Collector (ic) (max): 340A
• Current - Collector Cutoff (max): 500µA
• Input Capacitance (cies) @ Vce: 20nF @ 25V
• Power - Max: 1250W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
20
15
10
0.16
0.12
0.08
0.04
0.2
5
0
0.00001
0
0
Operating Frequency vs Collector Current
switching
ZVS
0.05
0.9
hard
0.7
0.5
0.1
0.3
60
ZCS
120
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.0001
I
C
180
(A)
240
V
D=50%
R
T
T
CE
G
J
C
=125°C
=3.3Ω
=75°C
=900V
300
0.001
rectangular Pulse Duration (Seconds)
Single Pulse
360
www.microsemi.com
0.01
Diode
450
400
350
300
250
200
150
100
50
0
APTGT225DA170G
0
T
0.1
Forward Characteristic of diode
J
=125°C
0.5
1
V
T
F
1.5
J
(V)
=25°C
1
2
T
J
=125°C
2.5
10
3
5 - 5