APTGF300SK120G Microsemi Power Products Group, APTGF300SK120G Datasheet - Page 4
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APTGF300SK120G
Manufacturer Part Number
APTGF300SK120G
Description
IGBT 1200V 400A 1780W SP6
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF300SK120G.pdf
(5 pages)
Specifications of APTGF300SK120G
Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.9V @ 15V, 300A
Current - Collector (ic) (max)
400A
Current - Collector Cutoff (max)
500µA
Input Capacitance (cies) @ Vce
21nF @ 25V
Power - Max
1780W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
600
500
400
300
200
100
600
500
400
300
200
100
80
70
60
50
40
30
20
10
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
Switching Energy Losses vs Gate Resistance
0
0
0
0.00001
0
0
0
5
V
V
I
T
C
CE
GE
J
= 150A
0.7
0.1
0.05
0.9
0.3
Output Characteristics (V
= 125°C
0.5
= 600V
=15V
6
4
1
Gate Resistance (ohms)
Transfert Characteristics
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
7
8
2
0.0001
V
8
T
V
J
Eon
T
CE
=125°C
GE
12
J
3
=25°C
(V)
(V)
T
9
J
=125°C
T
J
16
=25°C
4
Eoff
10
GE
www.microsemi.com
=15V)
rectangular Pulse Duration (Seconds)
20
0.001
5
11
24
12
6
Single Pulse
0.01
700
600
500
400
300
200
100
600
500
400
300
200
100
80
70
60
50
40
30
20
10
0
0
0
0
0
0
V
V
R
T
V
T
R
Reverse Bias Safe Operating Area
T
Energy losses vs Collector Current
CE
GE
J
APTGF300SK120G
G
GE
J
G
J
= 125°C
=125°C
= 3 Ω
=3 Ω
0.1
= 125°C
= 600V
= 15V
100
=15V
300
1
Output Characteristics
200
2
600
I
C
V
300
(A)
CE
V
V
GE
3
CE
(V)
=20V
900
1
(V)
400
IGBT
4
Eon
1200
V
500
GE
V
V
GE
5
GE
Eoff
=15V
=9V
=12V
1500
600
10
6
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