APTGT450DA60G Microsemi Power Products Group, APTGT450DA60G Datasheet - Page 5

• Manufacturer Part Number: APTGT450DA60G
• Description: IGBT 600V 550A 1750W SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT450DA60G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 450A
• Current - Collector (ic) (max): 550A
• Current - Collector Cutoff (max): 500µA
• Input Capacitance (cies) @ Vce: 37nF @ 25V
• Power - Max: 1750W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.16
0.14
0.12
0.08
0.06
0.04
0.02
120
100
0.1
80
60
40
20
0.00001
0
0
Operating Frequency vs Collector Current
0
ZCS
0.5
switching
0.3
0.1
0.9
0.7
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.05
Hard
200
ZVS
0.0001
I
400
C
(A)
V
D=50%
R
T
T
600
CE
G
J
c
=150°C
=85°C
=1Ω
=300V
Rectangular Pulse Duration in Seconds
0.001
www.microsemi.com
Single Pulse
800
Diode
0.01
1000
800
600
400
200
0
APTGT450DA60G
0
0.1
Forward Characteristic of diode
T
0.4
J
=150°C
T
0.8
J
=125°C
V
1
F
(V)
1.2
1.6
T
J
=25°C
10
2
5 - 5