APTGT150DU120G Microsemi Power Products Group, APTGT150DU120G Datasheet - Page 4
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APTGT150DU120G
Manufacturer Part Number
APTGT150DU120G
Description
IGBT MOD TRENCH DUAL SOURCE SP6
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT150DU120G.pdf
(5 pages)
Specifications of APTGT150DU120G
Igbt Type
Trench and Field Stop
Configuration
Dual, Common Source
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 150A
Current - Collector (ic) (max)
220A
Current - Collector Cutoff (max)
350µA
Input Capacitance (cies) @ Vce
10.7nF @ 25V
Power - Max
690W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
300
250
200
150
100
300
250
200
150
100
34
30
26
22
18
14
10
0.16
0.12
0.08
0.04
Switching Energy Losses vs Gate Resistance
50
50
6
2
0.2
0
0.00001
0
0
0
0
5
V
V
I
T
C
J
CE
GE
= 150A
= 125°C
Output Characteristics (V
T
= 600V
2
=15V
0.9
0.3
0.5
0.1
0.05
J
0.7
=125°C
6
Transfert Characteristics
Gate Resistance (ohms)
4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
T
Eon
7
J
=25°C
6
0.0001
8
8
V
V
CE
GE
2
(V)
T
10 12 14
(V)
J
=25°C
9
T
10
Eon
GE
J
=125°C
T
3
=15V)
J
rectangular Pulse Duration (Seconds)
=125°C
0.001
Eoff
11
Er
16
www.microsemi.com
Single Pulse
18
12
IGBT
4
0.01
350
300
250
200
150
100
300
250
200
150
100
32
28
24
20
16
12
50
50
8
4
0
0
0
APTGT150DU120G
0
0
0
V
V
R
T
V
T
R
Energy losses vs Collector Current
J
Reverse Bias Safe Operating Area
CE
GE
G
J
T
= 125°C
GE
G
0.1
=125°C
= 2.2Ω
=2.2Ω
J
= 600V
= 15V
=15V
50
= 125°C
400
1
Output Characteristics
100
V
GE
I
=17V
C
V
150
800
Eoff
V
(A)
CE
CE
2
(V)
1
(V)
200
1200
V
GE
3
V
=15V
V
250
GE
GE
Eon
=13V
=9V
Er
1600
10
300
4
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