APTGT100TDU60PG Microsemi Power Products Group, APTGT100TDU60PG Datasheet
APTGT100TDU60PG
Specifications of APTGT100TDU60PG
Related parts for APTGT100TDU60PG
APTGT100TDU60PG Summary of contents
Page 1
... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT100TDU60PG ® Application C5 • AC Switches • Switched Mode Power Supplies G5 • ...
Page 2
... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT100TDU60PG = 25°C unless otherwise specified j Test Conditions 600V 25°C V =15V 100A T = 150°C C ...
Page 3
... T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6-P Package outline (dimensions in mm) See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com APTGT100TDU60PG Min IGBT Diode 2500 -40 -40 -40 To heatsink M6 3 www.microsemi.com Typ Max Unit 0 ...
Page 4
... Eon Gate Resistance (ohms) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 0.0001 APTGT100TDU60PG =15V) GE 200 T J 175 150 125 T =150°C J 100 2.5 3 Energy losses vs Collector Current ...
Page 5
... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT100TDU60PG Forward Characteristic of diode 200 ...