APTGT200DH60G Microsemi Power Products Group, APTGT200DH60G Datasheet - Page 5

• Manufacturer Part Number: APTGT200DH60G
• Description: IGBT MOD TRENCH ASYM BRIDGE SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT200DH60G

• Igbt Type: Trench and Field Stop
• Configuration: Asymmetrical Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 200A
• Current - Collector (ic) (max): 290A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 12.3nF @ 25V
• Power - Max: 625W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.45
0.35
0.25
0.15
0.05
120
100
0.4
0.3
0.2
0.1
80
60
40
20
0.00001
0
0
Operating Frequency vs Collector Current
0
ZCS
0.5
0.3
0.9
0.7
0.1
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
switching
0.05
Hard
50
ZVS
100
0.0001
I
C
(A)
150
V
D=50%
R
T
T
J
c
CE
G
=150°C
=85°C
=2Ω
200
=300V
Rectangular Pulse Duration in Seconds
0.001
Single Pulse
www.microsemi.com
250
Diode
0.01
400
350
300
250
200
150
100
50
0
0
APTGT200DH60G
0.1
Forward Characteristic of diode
T
0.4
J
=150°C
T
0.8
J
=125°C
V
1.2
F
1
(V)
T
J
1.6
=25°C
2
10
2.4
5 - 5