APTGT200DH60G Microsemi Power Products Group, APTGT200DH60G Datasheet - Page 5
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APTGT200DH60G
Manufacturer Part Number
APTGT200DH60G
Description
IGBT MOD TRENCH ASYM BRIDGE SP6
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT200DH60G.pdf
(5 pages)
Specifications of APTGT200DH60G
Igbt Type
Trench and Field Stop
Configuration
Asymmetrical Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 200A
Current - Collector (ic) (max)
290A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
12.3nF @ 25V
Power - Max
625W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.45
0.35
0.25
0.15
0.05
120
100
0.4
0.3
0.2
0.1
80
60
40
20
0.00001
0
0
Operating Frequency vs Collector Current
0
ZCS
0.5
0.3
0.9
0.7
0.1
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
switching
0.05
Hard
50
ZVS
100
0.0001
I
C
(A)
150
V
D=50%
R
T
T
J
c
CE
G
=150°C
=85°C
=2Ω
200
=300V
Rectangular Pulse Duration in Seconds
0.001
Single Pulse
www.microsemi.com
250
Diode
0.01
400
350
300
250
200
150
100
50
0
0
APTGT200DH60G
0.1
Forward Characteristic of diode
T
0.4
J
=150°C
T
0.8
J
=125°C
V
1.2
F
1
(V)
T
J
1.6
=25°C
2
10
2.4
5 - 5