APTGF350DA60G Microsemi Power Products Group, APTGF350DA60G Datasheet - Page 6
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APTGF350DA60G
Manufacturer Part Number
APTGF350DA60G
Description
IGBT 600V 430A 1562W SP6
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF350DA60G.pdf
(6 pages)
Specifications of APTGF350DA60G
Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 360A
Current - Collector (ic) (max)
430A
Current - Collector Cutoff (max)
200µA
Input Capacitance (cies) @ Vce
17.2nF @ 25V
Power - Max
1562W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
100000
10000
1000
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
100
0.00001
Capacitance vs Collector to Emitter Voltage
0
0
V
0.05
0.9
CE
0.7
0.5
0.3
0.1
, Collector to Emitter Voltage (V)
10
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.0001
20
30
40
www.microsemi.com
0.001
Rectangular Pulse Duration (Seconds)
Coes
Cies
Cres
50
0.01
Single Pulse
900
800
700
600
500
400
300
200
100
180
160
140
120
100
80
60
40
20
0
0
50
0
Operating Frequency vs Collector Current
switching
APTGF350DA60G
V
Hard
Reverse Bias Safe Operating Area
100 150 200 250 300 350 400 450
0.1
CE
, Collector to Emitter Voltage (V)
200
I
C
, Collector Current (A)
ZCS
400
1
V
D = 50%
R
T
T
G
J
C
CE
=75°C
= 125°C
= 1.25Ω
600
= 400V
ZVS
800
10
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