APTGF350DA60G Microsemi Power Products Group, APTGF350DA60G Datasheet - Page 6

• Manufacturer Part Number: APTGF350DA60G
• Description: IGBT 600V 430A 1562W SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF350DA60G

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 360A
• Current - Collector (ic) (max): 430A
• Current - Collector Cutoff (max): 200µA
• Input Capacitance (cies) @ Vce: 17.2nF @ 25V
• Power - Max: 1562W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
100000
10000
1000
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
100
0.00001
Capacitance vs Collector to Emitter Voltage
0
0
V
0.05
0.9
CE
0.7
0.5
0.3
0.1
, Collector to Emitter Voltage (V)
10
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.0001
20
30
40
www.microsemi.com
0.001
Rectangular Pulse Duration (Seconds)
Coes
Cies
Cres
50
0.01
Single Pulse
900
800
700
600
500
400
300
200
100
180
160
140
120
100
80
60
40
20
0
0
50
0
Operating Frequency vs Collector Current
switching
APTGF350DA60G
V
Hard
Reverse Bias Safe Operating Area
100 150 200 250 300 350 400 450
0.1
CE
, Collector to Emitter Voltage (V)
200
I
C
, Collector Current (A)
ZCS
400
1
V
D = 50%
R
T
T
G
J
C
CE
=75°C
= 125°C
= 1.25Ω
600
= 400V
ZVS
800
10
6 - 6