APTGT150DA170G Microsemi Power Products Group, APTGT150DA170G Datasheet - Page 4
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APTGT150DA170G
Manufacturer Part Number
APTGT150DA170G
Description
IGBT 1700V 250A 890W SP6
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT150DA170G.pdf
(5 pages)
Specifications of APTGT150DA170G
Igbt Type
Trench and Field Stop
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1700V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 150A
Current - Collector (ic) (max)
250A
Current - Collector Cutoff (max)
350µA
Input Capacitance (cies) @ Vce
13.5nF @ 25V
Power - Max
890W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
300
250
200
150
100
300
250
200
150
100
120
100
0.16
0.14
0.12
0.08
0.06
0.04
0.02
50
Switching Energy Losses vs Gate Resistance
50
80
60
40
20
0.1
0
0
0.00001
0
0
0
5
0
T
V
V
I
T
C
Output Characteristics (V
J
0.05
CE
GE
J
0.3
=125°C
= 150A
0.5
0.9
0.7
0.1
6
= 125°C
= 900V
=15V
Transfert Characteristics
5
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
7
10
8
0.0001
T
V
V
J
CE
=25°C
GE
15
9
2
(V)
(V)
T
J
10
=25°C
20
GE
T
T
11
J
3
J
=125°C
=15V)
=125°C
rectangular Pulse Duration (Seconds)
0.001
25
Eon
12
Eoff
Er
Single Pulse
30
13
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4
IGBT
0.01
350
300
250
200
150
100
120
100
50
300
250
200
150
100
80
60
40
20
0
50
0
0
APTGT150DA170G
0
0
0
V
T
R
Energy losses vs Collector Current
V
V
R
T
Reverse Bias Safe Operating Area
J
GE
G
CE
GE
J
=125°C
G
=4.7Ω
0.1
T
= 125°C
= 4.7Ω
=15V
J
= 900V
= 15V
50
400
= 125°C
1
Output Characteristics
100
V
800
GE
2
=20V
I
V
C
150
CE
V
(A)
CE
1200
(V)
1
(V)
3
200
V
GE
=15V
1600
V
GE
V
250
=9V
4
GE
Eon
Eoff
=13V
Er
2000
300
10
5
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