APTGT75TDU60PG Microsemi Power Products Group, APTGT75TDU60PG Datasheet - Page 5
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APTGT75TDU60PG
Manufacturer Part Number
APTGT75TDU60PG
Description
IGBT MOD TRPL DUAL SOURCE SP6-P
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT75TDU60PG.pdf
(5 pages)
Specifications of APTGT75TDU60PG
Igbt Type
Trench and Field Stop
Configuration
Triple, Dual - Common Source
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 75A
Current - Collector (ic) (max)
100A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
4.62nF @ 25V
Power - Max
250W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
1.2
0.8
0.6
0.4
0.2
120
100
0.00001
80
60
40
20
1
0
0
Operating Frequency vs Collector Current
0
0.5
0.3
0.9
0.1
0.7
ZVS
0.05
switching
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Hard
20
0.0001
40
I
ZCS
C
(A)
60
V
D=50%
R
T
T
J
c
CE
G
=150°C
=85°C
=4.7Ω
=300V
80
0.001
Rectangular Pulse Duration in Seconds
Single Pulse
100
Diode
www.microsemi.com
0.01
APTGT75TDU60PG
150
125
100
75
50
25
0
0
0.1
Forward Characteristic of diode
T
0.4
J
=150°C
T
0.8
J
=125°C
V
1.2
F
1
(V)
T
J
=25°C
1.6
2
10
2.4
5 - 5