APTGF200U120DG Microsemi Power Products Group, APTGF200U120DG Datasheet - Page 5

• Manufacturer Part Number: APTGF200U120DG
• Description: IGBT 1200V 275A 1136W SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF200U120DG

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 200A
• Current - Collector (ic) (max): 275A
• Current - Collector Cutoff (max): 500µA
• Input Capacitance (cies) @ Vce: 13.8nF @ 25V
• Power - Max: 1136W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

180
140
100
56
48
40
32
24
16
45
40
35
30
25
60
20
80
60
40
20
8
0
0
Switching Energy Losses vs Gate Resistance
0
0
0
0
Turn-On Delay Time vs Collector Current
Turn-On Energy Loss vs Collector Current
V
R
V
Current Rise Time vs Collector Current
V
T
V
R
V
CE
G
R
CE
J
CE
CE
GE
G
I
= 125°C
= 1.2Ω
I
G
CE
I
= 600V
CE
= 1.2Ω
CE
= 600V
= 1.2Ω
= 15V
= 600V
= 600V
, Collector to Emitter Current (A)
2.5
100
100
, Collector to Emitter Current (A)
100
, Collector to Emitter Current (A)
Gate Resistance (Ohms)
200
200
200
5
Eoff, 100A
V
GE
Eon, 100A
7.5
300
300
300
=15V
Eon, 200A
V
GE
T
V
J
=125°C,
GE
= 15V
Eoff, 200A
=15V
400
400
400
10
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12.5
500
500
500
400
350
300
250
200
100000
50
40
30
20
10000
32
24
16
1000
8
0
100
0
0
Capacitance vs Collector to Emitter Voltage
Turn-Off Energy Loss vs Collector Current
0
Turn-Off Delay Time vs Collector Current
V
R
APTGF200U120DG
Current Fall Time vs Collector Current
0
CE
G
I
I
V
CE
V
= 1.2Ω
CE
I
V
R
= 600V
CE
CE
CE
GE
, Collector to Emitter Current (A)
G
, Collector to Emitter Current (A)
100
100
, Collector to Emitter Current (A)
, Collector to Emitter Voltage (V)
V
= 1.2Ω
100
= 600V
T
= 15V
CE
J
= 125°C
10
= 600V, V
200
200
200
20
GE
= 15V, R
T
J
T
300
300
= 125°C
300
J
= 25°C
30
V
T
V
T
GE
J
G
J
=25°C
GE
=125°C
=15V,
= 1.2Ω
=15V,
400
400
400
40
Coes
Cres
Cies
500
500
500
50
5 – 6