APTGF75H120TG Microsemi Power Products Group, APTGF75H120TG Datasheet - Page 4

• Manufacturer Part Number: APTGF75H120TG
• Description: POWER MODULE IGBT 1200V 75A SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF75H120TG

• Igbt Type: NPT
• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 75A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 5.1nF @ 25V
• Power - Max: 500W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTGF75H120TGMI; APTGF75H120TGMI

Typical Performance Curve
150
125
100
150
125
100
35
30
25
20
15
10
0.25
0.15
0.05
75
50
25
Switching Energy Losses vs Gate Resistance
75
50
25
5
0
0.3
0.2
0.1
0
0
0.00001
0
0
0
5
V
V
I
T
C
J
CE
GE
= 75A
Output Characteristics (V
= 125°C
0.05
0.9
0.7
0.5
0.3
0.1
10
= 600V
=15V
6
1
Gate Resistance (ohms)
Transfert Characteristics
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
20
7
2
0.0001
30
8
V
T
V
T
CE
J
GE
=125°C
J
3
=25°C
Eoff
(V)
(V)
40
T
9
J
=125°C
T
J
=25°C
4
Eon
50
10
GE
www.microsemi.com
=15V)
rectangular Pulse Duration (Seconds)
0.001
60
5
11
Single Pulse
70
12
6
IGBT
0.01
175
150
125
100
28
24
20
16
12
75
50
25
150
125
100
8
4
0
75
50
25
0
0
0
0
0
V
V
R
T
V
T
R
Reverse Bias Safe Operating Area
T
Energy losses vs Collector Current
J
CE
GE
G
GE
J
G
J
= 125°C
=125°C
= 7.5 Ω
=7.5 Ω
APTGF75H120TG
0.1
= 125°C
= 600V
= 15V
=15V
25
300
1
Output Characteristics
50
2
600
I
C
V
75
V
V
(A)
CE
GE
CE
3
(V)
=20V
900
1
(V)
100
4
Eon
1200
V
125
V
GE
V
GE
5
Er
GE
=15V
Eoff
=9V
=12V
1500
150
10
6
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