APTGT50H120TG Microsemi Power Products Group, APTGT50H120TG Datasheet - Page 5

• Manufacturer Part Number: APTGT50H120TG
• Description: IGBT MOD TRENCH FULL BRIDGE SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT50H120TG

• Igbt Type: Trench and Field Stop
• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 50A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 3.6nF @ 25V
• Power - Max: 277W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
80
70
60
50
40
30
20
10
0.6
0.5
0.4
0.3
0.2
0.1
0.00001
0
0
0
Operating Frequency vs Collector Current
switching
0.05
0.9
0.7
0.5
hard
0.3
0.1
ZCS
10
ZVS
20
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
30
0.0001
I
C
40
(A)
50
V
D=50%
R
T
T
CE
J
C
60
G
=125°C
=75°C
=18Ω
=600V
0.001
rectangular Pulse Duration (Seconds)
70
www.microsemi.com
80
Single Pulse
0.01
150
125
100
75
50
25
0
0
APTGT50H120TG
Forward Characteristic of diode
0.1
T
J
0.5
=125°C
1
V
T
F
J
(V)
=25°C
1
1.5
Diode
T
2
J
=125°C
2.5
10
5 - 5