APTGT75A170D1G Microsemi Power Products Group, APTGT75A170D1G Datasheet - Page 2
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APTGT75A170D1G
Manufacturer Part Number
APTGT75A170D1G
Description
IGBT MOD TRENCH PHASE LEG D1
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT75A170D1G.pdf
(3 pages)
Specifications of APTGT75A170D1G
Igbt Type
Trench and Field Stop
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
1700V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 75A
Current - Collector (ic) (max)
120A
Current - Collector Cutoff (max)
5mA
Input Capacitance (cies) @ Vce
6.5nF @ 25V
Power - Max
520W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
D1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APTGT75A170D1G
Manufacturer:
APT
Quantity:
1 000
Part Number:
APTGT75A170D1G
Quantity:
50
Electrical Characteristics
Dynamic Characteristics
Reverse diode ratings and characteristics
Thermal and package characteristics
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
Torque
BV
V
V
V
T
T
T
T
R
T
I
I
C
C
E
CE(on)
Wt
GE(th)
V
Q
T
CES
GES
T
d(off)
T
T
d(off)
T
E
T
d(on)
d(on)
ISOL
STG
thJC
res
off
ies
CES
C
F
rr
J
r
f
r
f
r
Collector - Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
Collector Emitter on Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Input Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn Off Energy
Diode Forward Voltage
Reverse Recovery Energy
Reverse Recovery Charge
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
All ratings @ T
APT website – http://www.advancedpower.com
j
= 25°C unless otherwise specified
V
Test Conditions
I
V
I
V
di/dt =990A/µs
I
V
di/dt =990A/µs
Test Conditions
V
V
I
V
V
Test Conditions
V
f = 1MHz
Inductive Switching (25°C)
V
V
I
R
Inductive Switching (125°C)
V
V
I
R
C
C
C
F
F
F
For terminals
GE
To Heatsink
G
G
GE
GE
GE
GE
GE
GE
Bus
GE
Bus
GE
R
R
= 75A
= 75A
= 75A
= 75A
= 75A
= 75A
= 18Ω
= 18Ω
= 900V
= 900V
= 0V, V
= 0V
= 0V, I
= 15V
= V
= 20V, V
= 0V, V
= 15V
= 15V
= 900V
= 900V
CE
, I
C
CE
CE
= 3mA
C
CE
= 1700V
= 3mA
= 25V
= 0V
T
T
T
T
T
T
T
T
j
j
j
j
j
j
j
j
= 25°C
Diode
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
IGBT
M5
M6
APTGT75A170D1
3500
Min
Min
1700
Min
Min
-40
-40
-40
5.2
2
3
17.5
Typ
0.22
Typ
Typ
Typ
200
100
750
100
230
100
900
120
1.8
1.9
2.0
2.4
5.8
6.5
10
20
32
25
Max
0.24
0.42
Max
Max
Max
150
125
125
180
400
3.5
2.2
2.4
6.4
5
5
Unit
°C/W
Unit
N.m
Unit
Unit
mA
mJ
µC
°C
nA
mJ
nF
V
ns
ns
V
V
V
V
g
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