APTGF50DH120TG Microsemi Power Products Group, APTGF50DH120TG Datasheet - Page 4
APTGF50DH120TG
Manufacturer Part Number
APTGF50DH120TG
Description
IGBT MODULE NPT ASYM BRIDGE SP4
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF50DH120TG.pdf
(6 pages)
Specifications of APTGF50DH120TG
Igbt Type
NPT
Configuration
Asymmetrical Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 50A
Current - Collector (ic) (max)
75A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
3.45nF @ 25V
Power - Max
312W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
300
250
200
150
100
200
160
120
50
80
40
0
9
8
7
6
5
4
3
2
1
0
0
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0
9
0
On state Voltage vs Gate to Emitter Volt.
T
250µs Pulse Test
< 0.5% Duty cycle
-50
250µs Pulse Test
< 0.5% Duty cycle
Breakdown Voltage vs Junction Temp.
250µs Pulse Test
< 0.5% Duty cycle
V
J
= 25°C
V
CE
10
GE
, Collector to Emitter Voltage (V)
Output characteristics (V
V
, Gate to Emitter Voltage (V)
-25
T
GE
J
, Junction Temperature (°C)
4
, Gate to Emitter Voltage (V)
2
Transfer Characteristics
11
0
T
J
=125°C
12
25
8
4
13
50
T
J
=25°C
T
14
T
75
J
GE
J
=25°C
12
T
6
=25°C
J
=15V)
=125°C
Ic=100A
www.microsemi.com
Ic=50A
Ic=25A
100
15
125
16
16
8
18
16
14
12
10
90
80
70
60
50
40
30
20
10
50
40
30
20
10
8
6
4
2
0
6
5
4
3
2
1
0
0
0
-50
-50
0
APTGF50DH120TG
0
DC Collector Current vs Case Temperature
On state Voltage vs Junction Temperature
250µs Pulse Test
< 0.5% Duty cycle
V
250µs Pulse Test
< 0.5% Duty cycle
V
I
T
C
CE
GE
-25
J
= 50A
-25
Output Characteristics (V
= 25°C
50
, Collector to Emitter Voltage (V)
= 15V
T
J
, Junction Temperature (°C)
T
C
0
1
100
, Case Temperature (°C)
0
Gate Charge (nC)
Gate Charge
25
150
25
V
50
2
CE
200
=600V
50
75
T
J
=25°C
V
250
75
GE
CE
100 125 150
T
=10V)
=240V
3
J
V
=125°C
Ic=100A
CE
Ic=50A
Ic=25A
100
300
=960V
125
350
4
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