APTGF100A120T3WG Microsemi Power Products Group, APTGF100A120T3WG Datasheet - Page 5

• Manufacturer Part Number: APTGF100A120T3WG
• Description: IGBT NPT PHASE 1200V 130A SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF100A120T3WG

• Igbt Type: NPT
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 100A
• Current - Collector (ic) (max): 130A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 6.5nF @ 25V
• Power - Max: 657W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.8
0.6
0.4
0.2
100
0.00001
80
60
40
20
1
0
0
Operating Frequency vs Collector Current
0
0.05
0.9
0.7
0.5
0.1
0.3
switching
20
hard
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
40
0.0001
ZVS
I
C
ZCS
(A)
60
80
V
D=50%
R
T
T
CE
J
C
G
=125°C
=75°C
=5.6 Ω
=600V
100
0.001
www.microsemi.com
rectangular Pulse Duration (Seconds)
120
Single Pulse
Diode
0.01
APTGF100A120T3WG
120
100
80
60
40
20
0
0.00
0.1
Forward Characteristic of diode
0.50
1.00
T
V
J
=125°C
1.50
F
(V)
1
2.00
T
J
2.50
=25°C
3.00
10
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