APTGT35H120T3G Microsemi Power Products Group, APTGT35H120T3G Datasheet - Page 4
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APTGT35H120T3G
Manufacturer Part Number
APTGT35H120T3G
Description
IGBT MOD TRENCH FULL BRIDGE SP3
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT35H120T3G.pdf
(5 pages)
Specifications of APTGT35H120T3G
Igbt Type
Trench and Field Stop
Configuration
Full Bridge Inverter
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 35A
Current - Collector (ic) (max)
55A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
2.5nF @ 25V
Power - Max
208W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
80
70
60
50
40
30
20
10
70
60
50
40
30
20
10
8
7
6
5
4
3
2
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Switching Energy Losses vs Gate Resistance
0
0
0.00001
25
0
0
5
V
V
I
T
C
CE
GE
J
= 35A
= 125°C
= 600V
0.9
0.7
0.05
=15V
0.3
0.5
0.1
0.5
Output Characteristics (V
6
Transfert Characteristics
Gate Resistance (ohms)
45
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
7
0.0001
1.5
V
8
V
T
CE
65
J
GE
=25°C
(V)
T
(V)
J
2
=25°C
9
Eon
2.5
10
85
GE
T
T
J
=15V)
J
=125°C
rectangular Pulse Duration (Seconds)
Eoff
0.001
=125°C
11
3
www.microsemi.com
105
3.5
12
Single Pulse
0.01
80
70
60
50
40
30
20
10
70
60
50
40
30
20
10
8
7
6
5
4
3
2
1
0
0
0
0
0
0
APTGT35H120T3G
V
V
R
T
V
T
R
CE
GE
G
J
GE
J
G
Energy losses vs Collector Current
= 125°C
Reverse Bias Safe Operating Area
10
=125°C
= 27Ω
T
=27Ω
0.1
= 600V
= 15V
=15V
J
= 125°C
400
20
1
Output Characteristics
30
V
GE
=17V
I
V
C
800
V
CE
40
(A)
CE
2
(V)
1
(V)
Eoff
50
V
Eon
1200
GE
60
3
=15V
V
V
GE
GE
=13V
=9V
70
1600
10
80
4
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