APT50GF120JRDQ3 Microsemi Power Products Group, APT50GF120JRDQ3 Datasheet - Page 7

• Manufacturer Part Number: APT50GF120JRDQ3
• Description: IGBT 1200V 120A 521W SOT227
• Manufacturer: Microsemi Power Products Group

Specifications of APT50GF120JRDQ3

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 75A
• Current - Collector (ic) (max): 120A
• Current - Collector Cutoff (max): 750µA
• Input Capacitance (cies) @ Vce: 5.32nF @ 25V
• Power - Max: 521W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT50GF120JRDQ3MI; APT50GF120JRDQ3MI

TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Symbol
I
Symbol
Symbol
F
I
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
F
(RMS)
I
I
I
I
RRM
RRM
RRM
FSM
(AV)
Q
Q
Q
V
t
t
t
t
rr
rr
rr
rr
F
rr
rr
rr
0.60
0.50
0.40
0.30
0.20
0.10
Characteristic / Test Conditions
Maximum Average Forward Current (T
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
Characteristic
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Characteristic / Test Conditions
Forward Voltage
0
10
-5
FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
D = 0.9
0.7
0.5
0.3
0.1
0.05
10
-4
Dissipated Power
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
I
F
= 1A, di
(Watts)
RECTANGULAR PULSE DURATION (seconds)
F
/dt = -100A/µs, V
C
SINGLE PULSE
= 85°C, Duty Cycle = 0.5)
10
J
T
-3
J
= 45°C, 8.3ms)
I
I
I
(°C)
I
F
F
F
I
I
F
F
F
= 75A
= 150A
= 75A, T
V
V
= 60A, di
0.006
V
= 60A, di
= 60A, di
R
R
0.149
R
= 800V, T
= 800V, T
Test Conditions
= 800V, T
R
J
0.091
= 125°C
= 30V, T
F
Z
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
0.238
F
F
EXT
/dt = -1000A/µs
All Ratings: T
/dt = -200A/µs
/dt = -200A/µs
are the external thermal
C
C
C
10
= 125°C
= 125°C
= 25°C
-2
0.524
0.174
J
= 25°C
T
C
(°C)
C
= 25°C unless otherwise specified.
Note:
MIN
MIN
Peak T J = P DM x Z θJC + T C
APT50GF120JRDQ3
-
-
-
-
-
-
-
-
-
-
Duty Factor D =
10
-1
t 1
2890
4720
3.48
2.17
TYP
TYP
265
560
350
150
540
2.8
t 2
60
13
40
60
73
5
APT50GF120JRDQ3
t 1
/
t 2
MAX-
MAX
-
-
-
1.0
Amps
Amps
UNIT
Amps
Amps
UNIT
Volts
UNIT
nC
nC
nC
ns
ns
ns