APTGT75H60T1G Microsemi Power Products Group, APTGT75H60T1G Datasheet - Page 3
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APTGT75H60T1G
Manufacturer Part Number
APTGT75H60T1G
Description
IGBT MOD TRENCH FULL BRIDGE SP1
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT75H60T1G.pdf
(5 pages)
Specifications of APTGT75H60T1G
Igbt Type
Trench and Field Stop
Configuration
Full Bridge Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 75A
Current - Collector (ic) (max)
100A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
4.62nF @ 25V
Power - Max
250W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Temperature sensor NTC
Symbol Characteristic
Symbol Characteristic
SP1 Package outline
Thermal and package characteristics
Torque
B
V
R
T
R
Wt
T
T
ISOL
STG
25/85
thJC
25
C
J
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Resistance @ 25°C
T
25
= 298.15 K
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
(dimensions in mm)
R
T
=
exp
(see application note APT0406 on www.microsemi.com for more information).
B
25
/
85
R
25
T
1
25
−
T
1
www.microsemi.com
T: Thermistor temperature
R
T
: Thermistor value at T
To heatsink
APTGT75H60T1G
Diode
IGBT
M4
2500
Min
Min
-40
-40
-40
2.5
3952
Typ
Typ
50
Max
0.60
0.98
Max
175
125
100
4.7
80
°C/W
Unit
Unit
N.m
kΩ
°C
K
V
g
3 – 5