APTGT100DSK60T3G Microsemi Power Products Group, APTGT100DSK60T3G Datasheet - Page 5

• Manufacturer Part Number: APTGT100DSK60T3G
• Description: IGBT MODULE DUAL BUCK CHOP SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT100DSK60T3G

• Igbt Type: Trench and Field Stop
• Configuration: Dual Buck Chopper
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 100A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 6.1nF @ 25V
• Power - Max: 340W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
120
100
0.00001
80
60
40
20
0
0
Operating Frequency vs Collector Current
0
0.5
0.3
0.9
0.1
0.7
switching
0.05
ZCS
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Hard
25
50
0.0001
ZVS
I
C
75
(A)
100
V
D=50%
R
T
T
J
c
CE
G
=150°C
=85°C
=3.3Ω
=300V
0.001
Rectangular Pulse Duration in Seconds
125
Single Pulse
www.microsemi.com
150
0.01
APTGT100DSK60T3G
200
175
150
125
100
75
50
25
0
0
0.1
Forward Characteristic of diode
T
0.4
J
=150°C
T
0.8
J
=125°C
V
1.2
F
1
(V)
T
J
Diode
=25°C
1.6
2
10
2.4
5 - 5