APTGT50DDA120T3G Microsemi Power Products Group, APTGT50DDA120T3G Datasheet - Page 5
![no-image](/images/manufacturer_photos/0/4/447/microsemi_power_products_group_sml.jpg)
APTGT50DDA120T3G
Manufacturer Part Number
APTGT50DDA120T3G
Description
IGBT MOD TRENCH DL BST CHOP SP3
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT50DDA120T3G.pdf
(5 pages)
Specifications of APTGT50DDA120T3G
Igbt Type
Trench and Field Stop
Configuration
Dual Boost Chopper
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 50A
Current - Collector (ic) (max)
75A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
3.6nF @ 25V
Power - Max
270W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.8
0.6
0.4
0.2
80
60
40
20
0.00001
0
1
0
0
Operating Frequency vs Collector Current
switching
0.05
0.9
0.7
0.5
0.3
0.1
ZCS
hard
10
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
20
ZVS
0.0001
30
I
C
(A)
40
50
V
D=50%
R
T
T
J
C
CE
G
=125°C
=75°C
=18Ω
=600V
0.001
rectangular Pulse Duration (Seconds)
60
www.microsemi.com
70
Single Pulse
Diode
0.01
APTGT50DDA120T3G
160
140
120
100
80
60
40
20
0
0
Forward Characteristic of diode
0.1
0.5
1
T
J
=125°C
V
1.5
F
(V)
1
2
T
J
=25°C
2.5
10
3
5 - 5