APTGF25H120T3G Microsemi Power Products Group, APTGF25H120T3G Datasheet - Page 6
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APTGF25H120T3G
Manufacturer Part Number
APTGF25H120T3G
Description
IGBT MODULE NPT FULL BRIDGE SP3
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF25H120T3G.pdf
(6 pages)
Specifications of APTGF25H120T3G
Igbt Type
NPT
Configuration
Full Bridge Inverter
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 25A
Current - Collector (ic) (max)
40A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
1.65nF @ 25V
Power - Max
208W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
10000
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1000
0.00001
100
0
10
Capacitance vs Collector to Emitter Voltage
0
0.05
0.9
0.7
0.5
0.3
0.1
V
CE
, Collector to Emitter Voltage (V)
10
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.0001
20
30
0.001
40
Rectangular Pulse Duration (Seconds)
Coes
Cres
Cies
www.microsemi.com
Single Pulse
50
0.01
120
100
80
60
40
20
0
Operating Frequency vs Collector Current
0
switching
APTGF25H120T3G
Hard
0.1
I
C
10
, Collector Current (A)
ZCS
ZVS
20
1
V
D = 50%
R
T
T
J
C
CE
G
= 75°C
= 125°C
= 22Ω
30
= 600V
10
40
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