APTGT30A170T1G Microsemi Power Products Group, APTGT30A170T1G Datasheet
APTGT30A170T1G
Specifications of APTGT30A170T1G
Related parts for APTGT30A170T1G
APTGT30A170T1G Summary of contents
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... NTC 4 • 12 • • Benefits • • • • • • Parameter www.microsemi.com APTGT30A170T1G V = 1700V CES I = 30A @ Tc = 80°C C Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control ® Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT30A170T1G = 25°C unless otherwise specified j Test Conditions 1700V 25° 15V 30A T = 125°C C ...
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... T: Thermistor temperature 25 Thermistor value − B 25 www.microsemi.com APTGT30A170T1G Min Typ Max IGBT 0.60 Diode 0.70 3500 -40 150 -40 125 -40 100 M4 2.5 4.7 80 Min Typ Max 50 3952 Unit °C/W V °C N ...
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... GE T =25° =125° 2 =25° =125° (V) GE Eon Eoff 100 120 IGBT Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) www.microsemi.com APTGT30A170T1G Output Characteristics 125° =19V =15V =13V = (V) CE Energy losses vs Collector Current 900V Eon 15V Ω ...
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... U.S and Foreign patents pending. All Rights Reserved. V =900V CE D=50% R =18 Ω =125° =75°C C hard Diode Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) www.microsemi.com APTGT30A170T1G Forward Characteristic of diode 100 T =25° =125° =125° 0 ...