APTGT30H60T3G Microsemi Power Products Group, APTGT30H60T3G Datasheet - Page 3
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APTGT30H60T3G
Manufacturer Part Number
APTGT30H60T3G
Description
IGBT MOD TRENCH FULL BRIDGE SP3
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT30H60T3G.pdf
(5 pages)
Specifications of APTGT30H60T3G
Igbt Type
Trench and Field Stop
Configuration
Full Bridge Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 30A
Current - Collector (ic) (max)
50A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
1.6nF @ 25V
Power - Max
90W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Temperature sensor NTC
Thermal and package characteristics
Symbol Characteristic
Symbol Characteristic
SP3 Package outline
Torque
B
V
R
T
R
Wt
T
T
25/85
ISOL
STG
thJC
25
C
J
Resistance @ 25°C
T
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
25
= 298.15 K
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
28
1
(dimensions in mm)
R
T
=
exp
(see application note APT0406 on www.microsemi.com for more information).
B
25
/
85
R
25
T
1
25
−
T
1
www.microsemi.com
T: Thermistor temperature
R
T
: Thermistor value at T
To heatsink
17
12
APTGT30H60T3G
Diode
IGBT
M4
2500
Min
Min
-40
-40
-40
2.5
3952
Typ
Typ
50
Max
Max
2.45
175
125
100
110
1.6
4.7
°C/W
Unit
Unit
N.m
kΩ
°C
K
V
g
3 - 5