APTGF75DA120T1G Microsemi Power Products Group, APTGF75DA120T1G Datasheet - Page 5

• Manufacturer Part Number: APTGF75DA120T1G
• Description: IGBT 1200V 100A 500W SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF75DA120T1G

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 75A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 5.1nF @ 25V
• Power - Max: 500W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
100
0.8
0.6
0.4
0.2
0.00001
80
60
40
20
1
0
0
Operating Frequency vs Collector Current
0
0.05
0.9
0.7
0.5
switching
0.1
0.3
hard
20
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
ZCS
0.0001
40
I
ZVS
C
(A)
60
V
D=50%
R
T
T
J
C
CE
G
=125°C
=75°C
=7.5 Ω
=600V
80
0.001
rectangular Pulse Duration (Seconds)
www.microsemi.com
100
Single Pulse
Diode
0.01
APTGF75DA120T1G
150
125
100
75
50
25
0
0
0.1
Forward Characteristic of diode
0.5
1
T
J
=125°C
1.5
V
F
(V)
1
2
2.5
T
J
=25°C
3
10
3.5
5 – 5