APTGF30TL601G Microsemi Power Products Group, APTGF30TL601G Datasheet - Page 8
![POWER MODULE IGBT 600V 30A SP1](/photos/14/29/142980/aptgf30tl601g_sml.jpg)
APTGF30TL601G
Manufacturer Part Number
APTGF30TL601G
Description
POWER MODULE IGBT 600V 30A SP1
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF30TL601G.pdf
(9 pages)
Specifications of APTGF30TL601G
Igbt Type
NPT
Configuration
Three Level Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.45V @ 15V, 30A
Current - Collector (ic) (max)
42A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
1.35nF @ 25V
Power - Max
140W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APTGF30TL601GMI
APTGF30TL601GMI
APTGF30TL601GMI
CR1 to CR4 Typical performance curve
2.5
1.5
0.5
30
20
10
0.6
0.4
0.2
0.00001
0
2
1
0
0
0.0
0
V
V
R
T
Energy losses vs Collector Current
0.05
0.9
0.7
0.5
0.3
CE
GE
J
0.1
G
= 125°C
Forward Characteristic of diode
= 1Ω
= 400V
= 15V
0.5
10
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.0001
1.0
V
F
I
C
(V)
20
(A)
T
1.5
J
=125°C
T
J
=25°C
30
2.0
Rectangular Pulse Duration (Seconds)
0.001
2.5
40
www.microsemi.com
Single Pulse
0.01
0.375
0.125
0.25
Switching Energy Losses vs Gate Resistance
0.5
0
0
0.1
V
V
I
T
APTGF30TL601G
C
J
CE
GE
= 15A
= 125°C
= 400V
=15V
Gate Resistance (ohms)
1
1
2
3
10
4
8 - 9