APT150GN120J Microsemi Power Products Group, APT150GN120J Datasheet - Page 5

• Manufacturer Part Number: APT150GN120J
• Description: IGBT 1200V 215A 625W SOT227
• Manufacturer: Microsemi Power Products Group

Specifications of APT150GN120J

• Igbt Type: Field Stop and Trench
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 150A
• Current - Collector (ic) (max): 215A
• Current - Collector Cutoff (max): 100µA
• Input Capacitance (cies) @ Vce: 9.5nF @ 25V
• Power - Max: 625W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT150GN120JMI; APT150GN120JMI

Case temperature. (°C)
TYPICAL PERFORMANCE CURVES
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
20,000
10,000
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Junction
temp. (°C)
0.35
0.30
0.25
0.20
0.15
0.10
0.05
500
100
V
50
10
CE
0
10
0
(watts)
Power
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
-5
D = 0.9
10
0.05
0.7
0.5
0.3
0.1
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
RC MODEL
20
0.0457
0.133
0.0221
10
30
-4
40
RECTANGULAR PULSE DURATION (SECONDS)
C
C
C
ies
oes
res
0.025
0.569
30.8
SINGLE PULSE
50
10
-3
Figure 20, Operating Frequency vs Collector Current
30
10
5
1
20
T
T
D = 50 %
V
R
J
C
CE
G
10
= 125
= 75
= 1.0Ω
500
450
400
350
300
250
200
150
100
= 800V
Figure 18,Minimim Switching Safe Operating Area
-2
50
0
°
70
I
°
C
C
0
C
V
, COLLECTOR CURRENT (A)
CE
200
, COLLECTOR TO EMITTER VOLTAGE
120
400
Note:
170
Peak T J = P DM x Z θJC + T C
600
10
Duty Factor D =
-1
800
t 1
220
t 2
1000 1200 1400
t 1
270
/
t 2
APT150GN120J
F
f
f
P
max1
max2
max
diss
1.0
= min (f
=
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
max
+ t
- P
+ E
C
0.05
r
cond
, f
+ t
off
max2
d(off)
)
+ t
f