APTGT100DA60T1G Microsemi Power Products Group, APTGT100DA60T1G Datasheet - Page 4

• Manufacturer Part Number: APTGT100DA60T1G
• Description: IGBT BOOST CHOP 600V 150A SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT100DA60T1G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 100A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 6.1nF @ 25V
• Power - Max: 340W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
200
175
150
125
100
200
175
150
125
100
8
6
4
2
0
0.5
0.4
0.3
0.2
0.1
Switching Energy Losses vs Gate Resistance
75
50
25
75
50
25
0.00001
0
0
0
0
V
V
I
T
0
5
C
CE
GE
J
= 100A
= 150°C
0.9
= 300V
0.5
=15V
0.7
0.3
0.1
Output Characteristics (V
0.05
T
5
0.5
J
6
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
=150°C
Transfert Characteristics
Gate Resistance (ohms)
Eon
T
T
J
J
=125°C
7
10
=125°C
T
1
J
0.0001
=25°C
V
8
V
T
CE
15
T
1.5
J
GE
=25°C
J
=25°C
(V)
Eoff
(V)
T
9
J
=25°C
20
2
10
Eon
GE
T
J
=15V)
=150°C
Rectangular Pulse Duration in Seconds
0.001
Er
2.5
25
11
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Single Pulse
30
3
12
IGBT
0.01
APTGT100DA60T1G
250
200
150
100
200
175
150
125
100
7
6
5
4
3
2
1
0
50
75
50
25
0
0
0
0
0
V
V
R
T
J
CE
GE
G
V
T
R
T
Energy losses vs Collector Current
= 150°C
Reverse Bias Safe Operating Area
25
= 3.3Ω
J
GE
G
J
= 300V
= 15V
0.1
=150°C
100
=3.3Ω
= 150°C
0.5
=15V
50
200
1
Output Characteristics
75
300
V
1.5
I
C
GE
100 125 150 175 200
V
V
(A)
=19V
CE
CE
400 500
1
(V)
(V)
2
V
GE
2.5
Eoff
=15V
V
GE
V
=13V
GE
600 700
3
=9V
Eon
Er
10
3.5
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