APT40GP90JDQ2 Microsemi Power Products Group, APT40GP90JDQ2 Datasheet - Page 4

• Manufacturer Part Number: APT40GP90JDQ2
• Description: IGBT 900V 64A 284W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT40GP90JDQ2

• Igbt Type: PT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 900V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 40A
• Current - Collector (ic) (max): 64A
• Current - Collector Cutoff (max): 350µA
• Input Capacitance (cies) @ Vce: 3.3nF @ 25V
• Power - Max: 284W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT40GP90JDQ2MI; APT40GP90JDQ2MI

FIGURE 15, Switching Energy Losses vs. Gate Resistance
6000
5000
4000
3000
2000
1000
8000
7000
6000
5000
4000
3000
2000
1000
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 11, Current Rise Time vs Collector Current
20
15
10
70
60
50
40
30
20
10
5
0
0
0
0
I
I
CE
CE
I
CE
V
T
R
L = 100µH
R
V
V
R
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
GE
G
CE
J
G
, COLLECTOR TO EMITTER CURRENT (A)
G
= 25°C
= 4.3Ω
= 4.3Ω
=
= 600V
= +15V
= 600V
R
4.3Ω, L
G
, GATE RESISTANCE (OHMS)
or
T
125°C
=
J
V
100
=
GE
25 or 125°C,V
µ
H, V
= 15V
CE
=
600V
GE
=
15V
FIGURE 16, Switching Energy Losses vs Junction Temperature
FIGURE 14, Turn Off Energy Loss vs Collector Current
3500
3000
2500
2000
1500
1000
6000
5000
4000
3000
2000
1000
FIGURE 10, Turn-Off Delay Time vs Collector Current
140
120
100
120
100
500
FIGURE 12, Current Fall Time vs Collector Current
80
60
40
20
80
60
40
20
0
0
0
0
I
I
CE
CE
I
CE
T
V
R
L = 100µH
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
J
, COLLECTOR TO EMITTER CURRENT (A)
CE
G
=
=
T
=
V
125°C, V
J
4.3Ω
GE
, JUNCTION TEMPERATURE (°C)
600V
V
=15V,T
GE
=15V,T
GE
J
=
=25°C
15V
J
=125°C