APT100GT60JRDQ4 Microsemi Power Products Group, APT100GT60JRDQ4 Datasheet - Page 7

IGBT 600V 148A 500W SOT227

APT100GT60JRDQ4

Manufacturer Part Number
APT100GT60JRDQ4
Description
IGBT 600V 148A 500W SOT227
Manufacturer
Microsemi Power Products Group
Series
Thunderbolt IGBT®r
Datasheet

Specifications of APT100GT60JRDQ4

Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 100A
Current - Collector (ic) (max)
148A
Current - Collector Cutoff (max)
50µA
Input Capacitance (cies) @ Vce
5.15nF @ 25V
Power - Max
500W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT100GT60JRDQ4MI
APT100GT60JRDQ4MI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT100GT60JRDQ4
Manufacturer:
Microsemi Power Products Group
Quantity:
135
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Typical Performance Curves
Symbol Characteristic
Symbol Characteristic / Test Conditions
Symbol Characteristic / Test Conditions
I
I
F(RMS)
I
I
I
I
RRM
F(AV)
Q
RRM
RRM
FSM
V
Q
Q
t
t
t
t
rr
rr
rr
rr
rr
F
rr
rr
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Maximum Average Forward Current (T
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
Forward Voltage
0.35
0.30
0.25
0.20
0.15
0.10
0.05
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
0
10
-5
FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
D = 0.9
Dissipated Power
0.7
0.5
0.3
0.1
0.05
(Watts)
10
-4
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
T
J
10
(°C)
RECTANGULAR PULSE DURATION (seconds)
C
-3
SINGLE PULSE
0.0182
= 88°C, Duty Cycle = 0.5)
J
0.0673
I
I
I
F
= 45°C, 8.3 ms)
F
F
I
= 100A, di
F
= 100A, di
= 100A, di
V
V
V
= 1A, di
R
R
V
R
Test Conditions
R
= 400V, T
= 400V, T
= 400V, T
= 30V, T
0.361
I
0.188
F
10
= 100A, T
F
-2
/dt = -100A/µs,
F
F
F
/dt = -1000A/µs
/dt = -200A/µs
/dt = -200A/µs
I
I
F
F
C
C
J
C
= 100A
= 200A
= 25°C
All Ratings: T
5.17
= 125°C
= 125°C
= 25°C
0.0743
J
= 125°C
T
C
(°C)
10
-1
C
= 25°C unless otherwise specifi ed.
Z
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Min
Min
EXT
APT100GT60JRDQ4
Note:
-
-
-
-
-
-
-
-
-
-
are the external thermal
Peak T J = P DM x Z θJC + T C
Duty Factor D =
1.0
t 1
Type
1530
2890
1000
2.05
1.28
Typ
100
146
160
290
220
100
1.6
34
13
44
5
t 2
APT100GT60JRDQ4
t 1
/
t 2
Max
Max
2.2
-
-
-
-
-
-
-
-
-
-
10
Amps
Amps
Amps
Amps
Unit
Unit
Volts
Unit
nC
nC
nC
ns
ns
ns

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