APT65GP60J Microsemi Power Products Group, APT65GP60J Datasheet - Page 5
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APT65GP60J
Manufacturer Part Number
APT65GP60J
Description
IGBT 600V 130A 431W SOT227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet
1.APT65GP60J.pdf
(6 pages)
Specifications of APT65GP60J
Igbt Type
PT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 65A
Current - Collector (ic) (max)
130A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
7.4nF @ 25V
Power - Max
431W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APT65GP60J
Manufacturer:
APT
Quantity:
15 500
Company:
Part Number:
APT65GP60JDF2
Manufacturer:
APT
Quantity:
15 500
TYPICAL PERFORMANCE CURVES
Junction
temp. ( ”C)
10,000
Figure 17, Capacitance vs Collector-To-Emitter Voltage
5,000
1,000
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
0.30
0.25
0.20
0.15
0.10
0.05
500
100
V
50
10
CE
0
(Watts)
Power
10
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
-5
10
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
Case temperature
RC MODEL
0.9
0.5
0.05
0.7
0.3
0.1
20
0.069697
0.1363636
0.0833333
10
30
-4
40
RECTANGULAR PULSE DURATION (SECONDS)
0.0174613
0.226556
1.075632
C ies
C oes
SINGLE PULSE
C res
50
10
-3
10
300
250
200
150
100
187
100
Figure 18, Minimim Switching Safe Operating Area
-2
50
50
10
0
7
15
0
Figure 20, Operating Frequency vs Collector
V
T
T
D = 50 %
V
R
CE
J
C
CE
G
= 125
= 75
100
= 5
25
, COLLECTOR TO EMITTER VOLTAGE
= 400V
I
C
°
°
, COLLECTOR CURRENT (A)
C
C
F
f
f
P
35
max1
max 2
200
max
diss
Note:
45
T
min(f
t
300
P
E
Peak T J = P DM x Z JC + T C
J
R
d (on )
10
diss
on 2
Current
Duty Factor D =
JC
-1
T
55
max1
C
P
400
E
t
cond
r
0.05
off
t 1
, f
65
max 2
t
d(off )
t 2
500
)
75
t 1
t
/ t
600
f
2
85
APT65GP60J
1.0
700
95