APTGT75SK60T1G Microsemi Power Products Group, APTGT75SK60T1G Datasheet - Page 5

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APTGT75SK60T1G

Manufacturer Part Number
APTGT75SK60T1G
Description
IGBT 600V 100A 250W SP1
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGT75SK60T1G

Igbt Type
Trench and Field Stop
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 75A
Current - Collector (ic) (max)
100A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
4.62nF @ 25V
Power - Max
250W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
1.2
0.8
0.6
0.4
0.2
120
100
0.00001
80
60
40
20
1
0
0
Operating Frequency vs Collector Current
0
0.5
0.3
0.9
0.1
0.7
ZVS
switching
0.05
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Hard
20
0.0001
40
I
ZCS
C
(A)
60
V
D=50%
R
T
T
J
c
CE
G
=150°C
=85°C
=4.7Ω
=300V
80
Rectangular Pulse Duration in Seconds
0.001
www.microsemi.com
Single Pulse
100
Diode
0.01
150
125
100
APTGT75SK60T1G
75
50
25
0
0
0.1
Forward Characteristic of diode
T
0.4
J
=150°C
T
0.8
J
=125°C
V
1.2
F
1
(V)
T
J
1.6
=25°C
2
10
2.4
5 – 5

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