APT50GP60JDQ2 Microsemi Power Products Group, APT50GP60JDQ2 Datasheet - Page 8

• Manufacturer Part Number: APT50GP60JDQ2
• Description: IGBT 600V 100A 329W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT50GP60JDQ2

• Igbt Type: PT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 50A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 525µA
• Input Capacitance (cies) @ Vce: 5.7nF @ 25V
• Power - Max: 329W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 27. Reverse Recovery Charge vs. Current Rate of Change
Figure 29. Dynamic Parameters vs. Junction Temperature
1400
1200
1000
140
120
100
800
600
400
200
200
150
100
Figure 31. Junction Capacitance vs. Reverse Voltage
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
60
40
20
50
0
Figure 25. Forward Current vs. Forward Voltage
0
0
0
0
0
1
-di
T
V
V
t
J
R
F
rr
F
T
= 125°C
200 400 600 800 1000 1200 1400 1600
= 400V
/dt, CURRENT RATE OF CHANGE (A/µs)
, ANODE-TO-CATHODE VOLTAGE (V)
J
, JUNCTION TEMPERATURE (°C)
0.5
25
60A
V
T
R
J
, REVERSE VOLTAGE (V)
= 125°C
15A
1.0
50
I
RRM
Q
T
10
J
rr
1.5
75
= 175°C
T
J
100
2.0
= 25°C
T
J
t
rr
= -55°C
Q
30A
125
2.5
rr
100 200
3.0
150
Figure 26. Reverse Recovery Time vs. Current Rate of Change
Figure 30. Maximum Average Forward Current vs. CaseTemperature
Figure 28. Reverse Recovery Current vs. Current Rate of Change
200
150
100
50
35
30
25
20
15
10
50
45
40
35
30
25
20
15
10
0
5
0
5
0
0
0
25
-di
-di
T
V
J
F
R
F
= 125°C
200 400 600 800 1000 1200 1400 1600
/dt, CURRENT RATE OF CHANGE(A/µs)
200 400 600 800 1000 1200 1400 1600
= 400V
/dt, CURRENT RATE OF CHANGE (A/µs)
50
Case Temperature (°C)
15A
75
60A
100
30A
30A
60A
125
Duty cycle = 0.5
T
15A
J
T
V
150
J
R
= 175°C
= 125°C
= 400V
175