APT40GP60J Microsemi Power Products Group, APT40GP60J Datasheet - Page 4

• Manufacturer Part Number: APT40GP60J
• Description: IGBT 600V 86A 284W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT40GP60J

• Igbt Type: PT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 40A
• Current - Collector (ic) (max): 86A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 4.61nF @ 25V
• Power - Max: 284W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT40GP60JMI; APT40GP60JMI

FIGURE 15, Switching Energy Losses vs. Gate Resistance
3000
2500
2000
1500
1000
4000
3500
3000
2500
2000
1500
1000
FIGURE 13, Turn-On Energy Loss vs Collector Current
120
100
500
500
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 9, Turn-On Delay Time vs Collector Current
40
35
30
25
20
15
10
80
60
40
20
5
0
0
0
0
I
I
0
0
0
0
CE
CE
I
V
V
R
T
CE
R
V
T
V
E
CE
GE
G
J
T
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
J
GE
E
G
off
= 25°C, 10V
J
, COLLECTOR TO EMITTER CURRENT (A)
= 5
=
=125°C,10V
off
V
=
= 400V
= +15V
40A
=
=
5 , L
125°C
R
GE
80A
400V
+15V
20
20
G
20
10
= 10V
, GATE RESISTANCE (OHMS)
=
100
T
T
µ
J
J
E
H, V
40
= 25°C, 15V
40
40
20
=
off
25 or 125°C,V
20A
T
CE
T
J
J
=125°C, 15V
=
=
V
T
R
L = 100 µH
400V
J
25 or 125°C,V
V
CE
G
= 25°C, T
GE
60
60
60
= 5
30
E
= 400V
on2
= 15V
GE
80A
=
10V
J
E
80
40
80
80
GE
E
=125°C
on2
on2
=
40A
15V
20A
100
100
100
50
FIGURE 16, Switching Energy Losses vs Junction Temperature
2000
1500
1000
3000
2500
2000
1500
1000
FIGURE 14, Turn Off Energy Loss vs Collector Current
100
100
500
500
FIGURE 10, Turn-Off Delay Time vs Collector Current
80
60
40
20
80
60
40
20
FIGURE 12, Current Fall Time vs Collector Current
0
0
0
0
I
I
0
0
0
0
CE
CE
I
V
V
R
CE
V
V
R
V
R
L = 100 µH
CE
GE
R
G
CE
GE
E
G
E
V
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
T
CE
G
T
G
, COLLECTOR TO EMITTER CURRENT (A)
off
GE
= 5
off
J
= 5
J
= 400V
= +15V
= 400V
= 5
=
=
= +15V
T
=
40A
80A
=
= 400V
5 , L
125°C, V
J
125°C, V
15V,T
, JUNCTION TEMPERATURE (°C)
20
20
20
25
=
T
J
J
T
100
=25°C
J
=
GE
GE
=
25°C, V
µ
25°C, V
H, V
=
40
40
40
50
=
10V or 15V
10V or 15V
V
CE
V
GE
GE
GE
=
GE
=
=
400V
=
15V,T
10V,T
60
=
60
10V or 15V
60
75
V
10V or 15V
GE
J
=10V,T
J
=125°C
=25°C
E
on2
100
80
80
80
E
E
J
on2
on2
=125°C
E
80A
off
20A
40A
20A
APT40GP60J
125
100
100
100