APT150GN60J Microsemi Power Products Group, APT150GN60J Datasheet - Page 2
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APT150GN60J
Manufacturer Part Number
APT150GN60J
Description
IGBT 600V 220A 536W SOT227
Manufacturer
Microsemi Power Products Group
Datasheet
1.APT150GN60J.pdf
(6 pages)
Specifications of APT150GN60J
Igbt Type
Field Stop and Trench
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.85V @ 15V, 150A
Current - Collector (ic) (max)
220A
Current - Collector Cutoff (max)
25µA
Input Capacitance (cies) @ Vce
9.2nF @ 25V
Power - Max
536W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT150GN60JMI
APT150GN60JMI
APT150GN60JMI
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APT150GN60J
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Company:
Part Number:
APT150GN60J
Manufacturer:
APT
Quantity:
1 000
Part Number:
APT150GN60J
Quantity:
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Company:
Part Number:
APT150GN60JDQ4
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Company:
Part Number:
APT150GN60JDQ4
Manufacturer:
APT
Quantity:
1 000
Part Number:
APT150GN60JDQ4
Quantity:
107
DYNAMIC CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
3 See MIL-STD-750 Method 3471.
4 E
5 E
6 E
7 R
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Symbol
V
Torque
SSOA
V
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
loss. (See Figures 21, 22.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
t
t
t
t
C
E
E
E
E
Isolation
C
R
R
C
Q
Q
d(on)
d(off)
E
d(on)
d(off)
E
Q
W
on1
on2
off
G
GEP
on1
on2
on1
on2
oes
t
t
t
t
res
θ
θ
ies
ge
off
off
gc
r
r
f
f
g
JC
JC
is external gate resistance, not including R
T
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
RMS Voltage (
Package Weight
Maximum Terminal & Mounting Torque
ces
includes both IGBT and FRED leakages
50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
3
6
4
4
66
4
G(int)
55
5
nor gate driver impedance. (MIC4452)
T
Inductive Switching (125°C)
15V, L = 100µH,V
J
Inductive Switching (25°C)
= 175°C, R
V
GE
Test Conditions
Capacitance
Gate Charge
= 0V, V
T
V
R
V
R
V
T
V
V
V
f = 1 MHz
I
I
I
J
CC
CC
CE
G
G
C
C
J
C
GE
GE
GE
= +125°C
= +25°C
= 150A
= 150A
= 1.0Ω
= 150A
= 1.0Ω
= 300V
G
= 400V
= 400V
= 15V
= 15V
= 15V
= 4.3Ω
CE
CE
= 25V
7
7
= 600V
7
, V
GE
=
2500
MIN
450
MIN
9200
8810
8615
4295
8880
9735
5460
1.03
29.2
TYP
TYP
350
300
970
510
110
430
110
480
9.5
65
44
60
44
95
APT150GN60J
MAX
MAX
0.28
N/A
1.1
10
UNIT
UNIT
°C/W
Volts
Ib•in
N•m
gm
nC
pF
µ
µ
ns
ns
oz
V
A
J
J