CPV364M4KPBF Vishay, CPV364M4KPBF Datasheet - Page 5

IGBT SIP MODULE 600V 13A IMS-2

CPV364M4KPBF

Manufacturer Part Number
CPV364M4KPBF
Description
IGBT SIP MODULE 600V 13A IMS-2
Manufacturer
Vishay
Datasheets

Specifications of CPV364M4KPBF

Configuration
Three Phase Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 24A
Current - Collector (ic) (max)
24A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
1.6nF @ 30V
Power - Max
63W
Input
Standard
Ntc Thermistor
No
Mounting Type
Through Hole
Package / Case
19-SIP (13 Leads), IMS-2
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Continuous Collector Current At 25 C
24 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Dc Collector Current
24A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
63W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
No. Of Pins
13
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*CPV364M4K
CPV364M4K
CPV364M4K
VS-CPV364M4K
VS-CPV364M4K
VS-CPV364M4KPBF
VS-CPV364M4KPBF
VSCPV364M4K
VSCPV364M4K

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CPV364M4KPBF
Manufacturer:
RENESAS
Quantity:
101
Fig. 9 - Typical Switching Losses vs. Gate
1.5
1.0
0.5
3000
2500
2000
1500
1000
500
0
0
V
V
T
Fig. 7 - Typical Capacitance vs.
I
1
J
C
CC
GE
Collector-to-Emitter Voltage
= 25 C
= 15V
= 480V
= 13A
R , Gate Resistance (Ohm)
V
10
G
CE
R
°
G
V
C
C
C
Resistance
, Collector-to-Emitter Voltage (V)
, Gate Resistance (
GE
ies
res
oes
C res
C ies
C oes
=
=
=
=
20
0V,
C
C
C
ge
gc
ce
+ C
+ C
10
f = 1MHz
gc ,
gc
30
C
ce
SHORTED
40
50
100
0.1
10
20
16
12
1
Fig. 10 - Typical Switching Losses vs.
8
4
0
-60 -40 -20
0
R
V
V
V
Fig. 8 - Typical Gate Charge vs.
I
GE
CC
G
CC
C
= Ohm
= 15V
= 480V
= 400V
= 13A
Gate-to-Emitter Voltage
20
Junction Temperature
10
T , Junction Temperature ( C )
Q , Total Gate Charge (nC)
J
G
0
40
CPV364M4K
20
40
60
60
80 100 120 140 160
80
I =
I =
I =
C
C
C
°
100
6.5
26
13
A
A
A
120

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