CPV364M4KPBF Vishay, CPV364M4KPBF Datasheet - Page 2

• Manufacturer Part Number: CPV364M4KPBF
• Description: IGBT SIP MODULE 600V 13A IMS-2
• Manufacturer: Vishay

Specifications of CPV364M4KPBF

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 24A
• Current - Collector (ic) (max): 24A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 1.6nF @ 30V
• Power - Max: 63W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Through Hole
• Package / Case: 19-SIP (13 Leads), IMS-2
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 24 A
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Dc Collector Current: 24A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 63W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 13
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *CPV364M4K; CPV364M4K; CPV364M4K; VS-CPV364M4K; VS-CPV364M4K; VS-CPV364M4KPBF; VS-CPV364M4KPBF; VSCPV364M4K; VSCPV364M4K

Electrical Characteristics @ T
Switching Characteristics @ T
CPV364M4K
V
V
V
g
I
V
I
Q
Q
Q
t
t
t
t
E
E
E
t
t
t
t
t
E
L
C
C
C
t
I
Q
di
CES
GES
d(on)
r
d(off)
f
sc
d(on)
r
d(off)
f
rr
rr
V
V
fe
(BR)CES
CE(on)
GE(th)
FM
E
on
off
ts
ts
ies
oes
res
g
ge
gc
rr
(rec)M
(BR)CES
GE(th)
/dt
/ T
/ T
J
J
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Parameter
Parameter
b
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
––– 1.80
600
––– 0.63
––– 1.80
––– 1.56
–––
–––
–––
–––
–––
Min. Typ. Max. Units
3.0
11
—
—
—
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1600
–––
–––
–––
––– 3500
––– ±100
0.56
0.28
0.84
1.28
-13
1.3
1.2
110
110
250
150
130
220
188
160
4.0
18
7.5
6.5
14
49
50
30
91
47
30
55
42
74
80
—
–––
–––
––– mV/°C V
–––
250
–––
–––
2.3
6.0
1.7
1.6
170
170
140
120
180
600
1.1
6.0
21
74
60
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V/°C
A/µs
µA
nA
V
V
V
mJ
S
nC
mJ
nC
nH
pF
ns
ns
µs
ns
A
I
I
V
V
V
V
I
V
V
I
I
V
See Fig. 9,10, 18
Energy losses include "tail"
T
I
V
V
T
I
V
Energy losses include "tail"
and diode reverse recovery
V
V
T
I
V
and diode reverse recovery
Measured 5mm from package
V
V
ƒ = 1.0MHz
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
GE
GE
CE
CE
CE
GE
GE
GE
J
J
J
J
J
J
J
J
J
J
CC
GE
GE
CC
GE
GE
GE
CC
= 13A
= 24A
= 13A, T
= 15A
= 15A, T
= 13A
= 13A, V
= 13A, V
= 125°C
= 25°C
= 150°C,
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= V
= V
= 100V, I
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V
= 15V, R
= 360V, T
= 15V, R
= 15V, R
= 0V
= 30V
GE
GE
, I
, I
J
J
C
C
CC
CC
CE
CE
C
C
Conditions
= 150°C
= 150°C
See Fig.
See Fig.
= 250µA
Conditions
= 1.0mA
See Fig.
See Fig.
C
G
G
G
= 250µA
= 250µA
J
= 480V
= 480V
= 600V
= 600V, T
= 10A
= 10
= 10
= 10
= 125°C
15
14
17
16
See Fig.8
See Fig. 11,18
See Fig. 7
, V
V
See Fig. 2, 5
See Fig. 13
di/dt = 200Aµs
J
V
CPK
GE
I
= 150°C
R
F
= 200V
= 15V
= 15A
< 500V