APTGF300A120D3G Microsemi Power Products Group, APTGF300A120D3G Datasheet
APTGF300A120D3G
Specifications of APTGF300A120D3G
Related parts for APTGF300A120D3G
APTGF300A120D3G Summary of contents
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... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF300A120D3G Application • Welding converters 3 • Switched Mode Power Supplies • Uninterruptible Power Supplies • ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current RRM I DC Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy rr APTGF300A120D3G = 25°C unless otherwise specified j Test Conditions 1200V 25° 15V 300A T = 125°C C ...
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... RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz ISOL T Operating junction temperature range J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight (dimensions in mm) D3 Package outline A APTGF300A120D3G Min IGBT Diode 2500 -40 -40 -40 For terminals Heatsink M6 3 1° DÉTAIL A www.microsemi.com Typ ...
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... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.07 0.06 0.9 0.05 0.7 0.04 0.5 0.03 0.3 0.02 0.1 0.01 0.05 0 0.00001 0.0001 APTGF300A120D3G =15V) GE 600 T J 450 300 150 T =125° Energy losses vs Collector Current 80 V ...
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... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF300A120D3G Forward Characteristic of diode 600 ...