APTGT600U120D4G Microsemi Power Products Group, APTGT600U120D4G Datasheet - Page 5

• Manufacturer Part Number: APTGT600U120D4G
• Description: IGBT 1200V 900A 2500W D4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT600U120D4G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 600A
• Current - Collector (ic) (max): 900A
• Current - Collector Cutoff (max): 5mA
• Input Capacitance (cies) @ Vce: 40nF @ 25V
• Power - Max: 2500W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: D4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTGT600U120D4GMI; APTGT600U120D4GMI

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
50
40
30
20
10
0.08
0.06
0.04
0.02
0
0.00001
100
0
Operating Frequency vs Collector Current
switching
Hard
200
0.05
0.9
0.7
0.5
0.1
0.3
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
ZCS
300
400
0.0001
I
C
ZVS
(A)
500
V
D=50%
R
T
T
600
CE
J
C
G
=125°C
=75°C
=1.2 Ω
=600V
www.microsemi.com
700
0.001
rectangular Pulse Duration (Seconds)
800
Single Pulse
0.01
APTGT600U120D4G
1200
1000
800
600
400
200
0
0
Forward Characteristic of diode
0.1
0.4
T
J
=125°C
0.8
V
1.2
F
T
(V)
J
=25°C
1
T
J
=25°C
1.6
Diode
2
10
2.4
5 - 5