APTGF150DU120TG Microsemi Power Products Group, APTGF150DU120TG Datasheet - Page 4

• Manufacturer Part Number: APTGF150DU120TG
• Description: IGBT MODULE NPT DUAL 1200V SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF150DU120TG

• Igbt Type: NPT
• Configuration: Dual, Common Source
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 150A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 350µA
• Input Capacitance (cies) @ Vce: 10.2nF @ 25V
• Power - Max: 961W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTGF150DU120TGMP

Typical Performance Curve
300
250
200
150
100
300
250
200
150
100
70
60
50
40
30
20
10
0.14
0.12
0.08
0.06
0.04
0.02
50
Switching Energy Losses vs Gate Resistance
50
0
0.1
0
0
0.00001
0
0
0
5
V
V
I
T
C
CE
GE
J
= 150A
5
Output Characteristics (V
= 125°C
0.9
0.5
0.3
0.1
0.05
= 600V
0.7
=15V
6
1
10 15 20 25 30 35 40 45 50
Gate Resistance (ohms)
Transfert Characteristics
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
7
2
0.0001
V
8
T
V
J
T
CE
GE
=125°C
J
3
=25°C
(V)
(V)
T
9
J
=125°C
T
J
=25°C
4
10
GE
=15V)
Eoff
rectangular Pulse Duration (Seconds)
www.microsemi.com
Er
0.001
Eon
5
11
12
6
Single Pulse
0.01
350
300
250
200
150
100
56
48
40
32
24
16
300
250
200
150
100
50
APTGF150DU120TG
8
0
50
0
0
0
0
0
V
V
R
T
V
T
R
Reverse Bias Safe Operating Area
T
Energy losses vs Collector Current
J
CE
GE
G
GE
J
G
J
= 125°C
=125°C
= 5.6 Ω
=5.6 Ω
0.1
= 125°C
= 600V
= 15V
=15V
Er
50
300
1
Output Characteristics
100
2
600
I
C
V
150
(A)
CE
V
V
GE
CE
3
(V)
1
=20V
900
(V)
200
IGBT
4
Eon
1200
V
250
V
GE
V
GE
5
GE
Eoff
=15V
Er
=9V
=12V
1500
300
10
6
4 - 5