APTGT300SK60D3G Microsemi Power Products Group, APTGT300SK60D3G Datasheet - Page 4

• Manufacturer Part Number: APTGT300SK60D3G
• Description: IGBT BUCK CHOPPER 600V 400A D3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT300SK60D3G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 300A
• Current - Collector (ic) (max): 400A
• Current - Collector Cutoff (max): 500µA
• Input Capacitance (cies) @ Vce: 18.5nF @ 25V
• Power - Max: 940W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: D3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
500
400
300
200
100
35
30
25
20
15
10
Switching Energy Losses vs Gate Resistance
500
400
300
200
100
5
0
0.16
0.12
0.08
0.04
0
0.2
0
0.00001
0
5
0
V
V
I
T
C
0
CE
GE
J
= 300A
= 150°C
Output Characteristics (V
= 300V
=15V
0.9
Eoff
2.5
0.7
0.5
0.3
0.1
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.05
Transfert Characteristics
6
Gate Resistance (ohms)
T
0.5
J
=150°C
5
7
0.0001
1
V
V
7.5
GE
CE
8
(V)
T
(V)
T
J
J
1.5
=25°C
=25°C
10
9
Eon
GE
Er
T
=15V)
12.5
J
2
=150°C
10
Rectangular Pulse Duration in Seconds
0.001
15
2.5
11
Single Pulse
www.microsemi.com
IGBT
0.01
APTGT300SK60D3G
700
600
500
400
300
200
100
25
20
15
10
500
400
300
200
100
5
0
0
0
0
0
0
V
V
R
T
V
T
R
Reverse Bias Safe Operating Area
Energy losses vs Collector Current
J
CE
GE
G
J
GE
G
= 150°C
=150°C
T
= 2.2Ω
100
=2.2Ω
0.1
100
= 300V
= 15V
=15V
J
0.5
= 150°C
200
Output Characteristics
200
1
V
GE
300
I
1.5
=19V
C
V
300
V
(A)
CE
CE
400 500
(V)
1
(V)
2
V
400
GE
Eoff
=15V
2.5
V
GE
500
V
=13V
Eon
600
GE
3
Er
=9V
10
600
700
3.5
4 - 5