APTGT50X60T3G Microsemi Power Products Group, APTGT50X60T3G Datasheet
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APTGT50X60T3G
Specifications of APTGT50X60T3G
Related parts for APTGT50X60T3G
APTGT50X60T3G Summary of contents
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... Benefits Parameter www.microsemi.com APTGT50X60T3G V = 600V CES I = 50A 80°C C • Motor control ® • Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT50X60T3G = 25°C unless otherwise specified j Test Conditions 600V 25°C V =15V 50A T = 150°C C ...
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... R : Thermistor value − B heatsink 17 12 www.microsemi.com APTGT50X60T3G Min Typ Max 50 3952 Min Typ Max IGBT 0.85 Diode 1.42 2500 -40 175 -40 125 -40 100 M4 2.5 4.7 110 Unit kΩ K Unit ° ...
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... GE T =150° =25°C J 1 =25° =25° (V) GE Eoff Eon IGBT Single Pulse 0.001 0.01 Rectangular Pulse Duration in Seconds www.microsemi.com APTGT50X60T3G Output Characteristics 100 V =19V T = 150° =13V =15V = 0.5 1 1 (V) CE Energy losses vs Collector Current 3 300V 15V Eoff ...
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... U.S and Foreign patents pending. All Rights Reserved. V =300V CE D=50% R =8.2Ω =150° =85° (A) C Diode Single Pulse 0.001 0.01 Rectangular Pulse Duration in Seconds www.microsemi.com APTGT50X60T3G Forward Characteristic of diode 100 =125° =150° =25° 0.4 0.8 1.2 1 (V) F ...