APTGF50DDA120T3G Microsemi Power Products Group, APTGF50DDA120T3G Datasheet - Page 4
APTGF50DDA120T3G
Manufacturer Part Number
APTGF50DDA120T3G
Description
IGBT MOD NPT 1200V 50A SP3
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF50DDA120T3G.pdf
(7 pages)
Specifications of APTGF50DDA120T3G
Igbt Type
NPT
Configuration
Dual Boost Chopper
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 50A
Current - Collector (ic) (max)
70A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
3.45nF @ 25V
Power - Max
312W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APTGF50DDA120T3G
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Typical IGBT Performance Curve
250
200
150
100
160
120
50
80
40
0
0
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0
0
250µs Pulse Test
< 0.5% Duty cycle
25
250µs Pulse Test
< 0.5% Duty cycle
Breakdown Voltage vs Junction Temp.
V
V
CE
GE
, Collector to Emitter Voltage (V)
Output characteristics (V
, Gate to Emitter Voltage (V)
T
J
, Junction Temperature (°C)
4
2
Transfer Characteristics
50
T
J
=125°C
T
J
=25°C
8
4
75
T
J
=25°C
GE
12
100
T
6
J
T
=15V)
=125°C
J
=25°C
125
16
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8
APTGF50DDA120T3G
18
16
14
12
10
70
60
50
40
30
20
10
40
30
20
10
8
6
4
2
0
0
0
25
0
0
DC Collector Current vs Case Temperature
250µs Pulse Test
< 0.5% Duty cycle
V
I
T
C
CE
J
= 50A
Output Characteristics (V
= 25°C
50
, Collector to Emitter Voltage (V)
50
T
C
1
100
, Case Temperature (°C)
Gate Charge (nC)
Gate Charge
75
150
V
T
2
CE
J
=25°C
200
=600V
100
V
250
GE
CE
T
=10V)
=240V
3
J
V
125
=125°C
CE
300
=960V
350
150
4
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