APT50GT120JU3 Microsemi Power Products Group, APT50GT120JU3 Datasheet - Page 4

• Manufacturer Part Number: APT50GT120JU3
• Description: IGBT 1200V 75A 347W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: Trench + Field Stop IGBT®r

Specifications of APT50GT120JU3

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 50A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 5mA
• Input Capacitance (cies) @ Vce: 3.6nF @ 25V
• Power - Max: 347W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
100
12
10
0.35
0.25
0.15
0.05
75
50
25
Switching Energy Losses vs Gate Resistance
75
50
25
8
6
4
2
0
0.4
0.3
0.2
0.1
0
0
0.00001
0
5
0
5
V
T
V
CE
I
J
GE
C
= 125°C
Output Characteristics (V
= 50A
= 600V
0.05
6
=15V
0.7
0.3
0.1
0.9
0.5
Transfert Characteristics
10
Gate Resistance (ohms)
1
T
7
J
=25°C
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
15
0.0001
8
V
V
CE
GE
2
(V)
T
(V)
J
9
20
=25°C
T
10
GE
J
=125°C
3
T
25
=15V)
J
rectangular Pulse Duration (Seconds)
=125°C
0.001
Eon
11
Eoff
Single Pulse
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30
12
4
IGBT
0.01
120
100
100
20
16
12
75
50
25
80
60
40
20
8
4
0
0
0
0
0
0
V
T
V
T
R
Energy losses vs Collector Current
V
R
CE
J
T
GE
J
G
0.1
APT50GT120JU3
GE
G
=125°C
= 125°C
J
=18 Ω
Reverse Safe Operating Area
= 18 Ω
=15V
= 600V
= 125°C
= 15V
400
25
1
Output Characteristics
V
GE
I
C
V
=17V
800
V
50
CE
(A)
CE
2
(V)
1
(V)
1200
V
75
GE
3
V
=15V
V
Eon
GE
GE
Eoff
=13V
=9V
1600
10
100
4
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