APT150GN60JDQ4 Microsemi Power Products Group, APT150GN60JDQ4 Datasheet - Page 3
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APT150GN60JDQ4
Manufacturer Part Number
APT150GN60JDQ4
Description
IGBT 600V 220A 536W SOT227
Manufacturer
Microsemi Power Products Group
Datasheet
1.APT150GN60JDQ4.pdf
(9 pages)
Specifications of APT150GN60JDQ4
Igbt Type
Field Stop and Trench
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.85V @ 15V, 150A
Current - Collector (ic) (max)
220A
Current - Collector Cutoff (max)
50µA
Input Capacitance (cies) @ Vce
9.2nF @ 25V
Power - Max
536W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT150GN60JDQ4MI
APT150GN60JDQ4MI
APT150GN60JDQ4MI
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APT150GN60JDQ4
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Company:
Part Number:
APT150GN60JDQ4
Manufacturer:
APT
Quantity:
1 000
Part Number:
APT150GN60JDQ4
Quantity:
107
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 7, Threshold Voltage vs. Junction Temperature
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
350
300
250
200
150
100
350
300
250
200
150
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
50
50
0
0
0
-50 -25
FIGURE 1, Output Characteristics(T
V
0
0
8
CE
V
GE
V
TEST<0.5 % DUTY
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
GE
FIGURE 3, Transfer Characteristics
GE
250µs PULSE
T
T
= 15V
0.5
J
J
2
, GATE-TO-EMITTER VOLTAGE (V)
CYCLE
, GATE-TO-EMITTER VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
= 175°C
10
T
T
T
0
1.0
J
J
J
4
= -55°C
= 25°C
= 125°C
T
25
J
T
T
= 125°C
1.5
J
J
6
= 25°C
= -55°C
12
50
2.0
8
75 100 125 150
2.5
10
14
3.0
J
12
= 25°C)
3.5
16
14
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
400
350
300
250
200
150
100
300
250
200
150
100
3.0
2.5
2.0
1.5
1.0
0.5
50
16
14
12
10
50
FIGURE 2, Output Characteristics (T
0
8
6
4
2
0
0
0
-50 -25
V
0
0
0
CE
I
T
<0.5 % DUTY CYCLE
C
250µs PULSE TEST
J
, COLLECTER-TO-EMITTER VOLTAGE (V)
= 150A
= 25°C
25
200
V
T
5
GE
T
C
J
= 15V.
V
V
, Junction Temperature (°C)
0
, CASE TEMPERATURE (°C)
FIGURE 4, Gate Charge
CE
CE
50
GATE CHARGE (nC)
12, 13 &15V
400
11V
10
= 120V
= 300V
25
75
50
600
15
10V
100
75 100 125 150 175
800
20
125
9V
1000
8V
25
J
150
= 125°C)
7V
1200
175
30