APTDF400AA100G Microsemi Power Products Group, APTDF400AA100G Datasheet - Page 3
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APTDF400AA100G
Manufacturer Part Number
APTDF400AA100G
Description
DIODE MODULE DUAL CA 1000V SP6
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTDF400AA100G.pdf
(4 pages)
Specifications of APTDF400AA100G
Voltage - Forward (vf) (max) @ If
2.7V @ 400A
Current - Reverse Leakage @ Vr
250µA @ 1000V
Current - Average Rectified (io) (per Diode)
500A
Voltage - Dc Reverse (vr) (max)
1000V (1kV)
Reverse Recovery Time (trr)
290ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Anode
Mounting Type
Chassis Mount
Package / Case
LP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
3200
2800
2400
2000
1600
1200
0.16
0.14
0.12
0.08
0.06
0.04
0.02
1200
1000
800
400
36
32
28
24
20
16
12
0.1
800
600
400
200
0.00001
8
0
0
0
0
1
0.0
Capacitance vs. Reverse Voltage
Forward Current vs Forward Voltage
T
V
J
R
=125°C
=667V
0.05
V
0.9
0.7
0.3
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.5
0.1
QRR vs. Current Rate Charge
800
F
, Anode to Cathode Voltage (V)
0.5
V
R
, Reverse Voltage (V)
T
1600 2400 3200 4000 4800
J
10
=125°C
1.0
-di
0.0001
F
T
600 A
/dt (A/µs)
J
=175°C
1.5
100
2.0
T
T
400 A
200 A
J
J
0.001
=-55°C
=25°C
2.5
Rectangular Pulse Duration (Seconds)
www.microsemi.com
1000
3.0
Single Pulse
0.01
Max. Average Forward Current vs. Case Temp.
600
500
400
300
200
100
400
350
300
250
200
150
100
320
280
240
200
160
120
50
80
40
0
0
APTDF400AA100G
0
0
0
0.1
T
V
Trr vs. Current Rate of Charge
IRRM vs. Current Rate of Charge
J
R
25
=125°C
=667V
800 1600 2400 3200 4000 4800
800 1600 2400 3200 4000 4800
Case Temperature (ºC)
50
-di
-di
75
F
F
/dt (A/µs)
/dt (A/µs)
1
100 125 150 175
600 A
Duty Cycle = 0.5
T
J
T
V
=175°C
J
R
200 A
=125°C
=667V
600 A
400 A
200 A
400 A
10
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