APT2X100DQ60J Microsemi Power Products Group, APT2X100DQ60J Datasheet - Page 3

• Manufacturer Part Number: APT2X100DQ60J
• Description: DIODE DUAL 100A 600V SOT-227
• Manufacturer: Microsemi Power Products Group

Specifications of APT2X100DQ60J

• Voltage - Forward (vf) (max) @ If: 2.2V @ 100A
• Current - Reverse Leakage @ Vr: 25µA @ 600V
• Current - Average Rectified (io) (per Diode): 100A
• Voltage - Dc Reverse (vr) (max): 600V
• Reverse Recovery Time (trr): 160ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 4. Reverse Recovery Charge vs. Current Rate of Change
Figure 6. Dynamic Parameters vs. Junction Temperature
4000
3500
3000
2500
2000
1500
1000
1400
1200
1000
300
250
200
150
100
500
800
600
400
200
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Figure 8. Junction Capacitance vs. Reverse Voltage
50
0
0
0
Figure 2. Forward Current vs. Forward Voltage
0
0
0
1
-di
V
F
F
T
T
t
T
/dt, CURRENT RATE OF CHANGE (A/µs)
V
rr
, ANODE-TO-CATHODE VOLTAGE (V)
J
J
R
J
200
25
, JUNCTION TEMPERATURE (°C)
=125°C
T
0.5
=400V
100A
= 125°C
J
V
= 175°C
R
, REVERSE VOLTAGE (V)
T
J
I
RRM
400
1.0
50 75 100
= 25°C
10
600
1.5
Q
rr
800
125 150 25
2.0
T
J
= -55°C
t
1000
Q
rr
50A
2.5
200A
rr
100 200
1200
3.0
50
Figure 3. Reverse Recovery Time vs. Current Rate of Change
Figure 7. Maximum Average Forward Current vs. CaseTemperature
Figure 5. Reverse Recovery Current vs. Current Rate of Change
300
250
200
150
100
180
160
140
120
100
50
60
50
40
30
20
10
80
60
40
20
0
0
0
75
0
0
-di
-di
T
V
F
J
F
R
T
V
/dt, CURRENT RATE OF CHANGE(A/µs)
=125°C
J
/dt, CURRENT RATE OF CHANGE (A/µs)
=400V
R
=125°C
100
200
=400V
200
Case Temperature (°C)
400
400
125
150
600
600
200A
200A
100A
800
800
175
50A
Duty cycle = 0.5
100A
1000
T
1000
J
50A
=175°C
1200
1200