APT2X20DC60J Microsemi Power Products Group, APT2X20DC60J Datasheet - Page 3

• Manufacturer Part Number: APT2X20DC60J
• Description: DIODE SIC 600V 20A SOT-227
• Manufacturer: Microsemi Power Products Group

Specifications of APT2X20DC60J

• Voltage - Forward (vf) (max) @ If: 1.8V @ 20A
• Current - Reverse Leakage @ Vr: 400µA @ 600V
• Current - Average Rectified (io) (per Diode): 20A
• Voltage - Dc Reverse (vr) (max): 600V
• Reverse Recovery Time (trr): 0ns
• Diode Type: Silicon Carbide Schottky
• Speed: No Recovery Time > 500mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Typical Diode Performance Curve
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
1.4
1.2
0.8
0.6
0.4
0.2
800
600
400
200
0.00001
40
30
20
10
1
0
0
0
0
1
0.05
0.7
0.5
0.9
0.3
0.1
Capacitance vs.Reverse Voltage
0.5
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Forward Characteristics
T
J
V
=75°C
F
V
1
Forward Voltage (V)
R
10
Reverse Voltage
0.0001
T
J
=25°C
1.5
2
T
100
J
=125°C
2.5
T
J
=175°C
0.001
Rectangular Pulse Duration (Seconds)
3
1000
3.5
Single Pulse
www.microsemi.com
0.01
400
350
300
250
200
150
100
50
0
200
APT2X21DC60J
APT2X20DC60J
0.1
300
Reverse Characteristics
V
R
Reverse Voltage (V)
400
T
J
=125°C
500
T
J
=175°C
1
600
T
J
=25°C
T
J
700
=75°C
800
10
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